Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001)
Identifieur interne : 000541 ( Russie/Analysis ); précédent : 000540; suivant : 000542Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001)
Auteurs : RBID : Pascal:03-0317453Descripteurs français
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Abstract
We show experimentally and theoretically that the characteristic line at 3 eV in the reflectance anisotropy (RA) spectra of As-rich (001) GaAs has a mixed bulk and surface origin. The experimental observations rely on the analysis of the position of this line as a function of indium concentration in Ga1-xInxAs. Up to x≃0.5, the peak energy dependence follows that of the nearby E1 bulk optical transition, which shows that the line is not of pure surface character. The same conclusion is drawn from the mere fact that the line position depends on x since, because of indium surface segregation and bond length conservation, the energy of a purely surface-related transition should weakly depend on bulk composition. The combined relevance of surface states and surface-perturbed bulk states is shown by an ab initio density functional theory local dnesity approximation calculation of the RA spectrum of As-rich (001) GaAs, which also explains the observed oxygen-induced changes of the RA spectrum.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga<sub>1-x</sub>In<sub>x</sub>As(001)</title><author><name sortKey="Paget, D" uniqKey="Paget D">D. Paget</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 Palaiseau cedex, France</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 Palaiseau cedex</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="Hogan, C" uniqKey="Hogan C">C. Hogan</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dipartimento di Fisica and INFM, Universita di Roma Tor Vergata, 00133 Roma, Italy</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Italie</country><wicri:regionArea>Dipartimento di Fisica and INFM, Universita di Roma Tor Vergata, 00133 Roma</wicri:regionArea><placeName><settlement type="city">Rome</settlement><region nuts="2">Latium</region></placeName></affiliation></author><author><name sortKey="Berkovits, V L" uniqKey="Berkovits V">V. L. Berkovits</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physico-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 194021 Saint Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Tereshchenko, O E" uniqKey="Tereshchenko O">O. E. Tereshchenko</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk, Russia</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk</wicri:regionArea><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0317453</idno><date when="2003-06-15">2003-06-15</date><idno type="stanalyst">PASCAL 03-0317453 AIP</idno><idno type="RBID">Pascal:03-0317453</idno><idno type="wicri:Area/Main/Corpus">00CF92</idno><idno type="wicri:Area/Main/Repository">00C269</idno><idno type="wicri:Area/Russie/Extraction">000541</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ab initio calculations</term><term>Bond lengths</term><term>Density functional method</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Reflectivity</term><term>Surface segregation</term><term>Surface states</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7840F</term><term>7868</term><term>7320A</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Etat surface</term><term>Calcul ab initio</term><term>Facteur réflexion</term><term>Ségrégation surface</term><term>Longueur liaison</term><term>Méthode fonctionnelle densité</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We show experimentally and theoretically that the characteristic line at 3 eV in the reflectance anisotropy (RA) spectra of As-rich (001) GaAs has a mixed bulk and surface origin. The experimental observations rely on the analysis of the position of this line as a function of indium concentration in Ga<sub>1-x</sub>In<sub>x</sub>As. Up to x≃0.5, the peak energy dependence follows that of the nearby E<sub>1</sub> bulk optical transition, which shows that the line is not of pure surface character. The same conclusion is drawn from the mere fact that the line position depends on x since, because of indium surface segregation and bond length conservation, the energy of a purely surface-related transition should weakly depend on bulk composition. The combined relevance of surface states and surface-perturbed bulk states is shown by an ab initio density functional theory local dnesity approximation calculation of the RA spectrum of As-rich (001) GaAs, which also explains the observed oxygen-induced changes of the RA spectrum.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>67</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga<sub>1-x</sub>In<sub>x</sub>As(001)</s1></fA08><fA11 i1="01" i2="1"><s1>PAGET (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>HOGAN (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>BERKOVITS (V. L.)</s1></fA11><fA11 i1="04" i2="1"><s1>TERESHCHENKO (O. E.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 Palaiseau cedex, France</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Dipartimento di Fisica and INFM, Universita di Roma Tor Vergata, 00133 Roma, Italy</s1><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>A. F. Ioffe Physico-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk, Russia</s1><sZ>4 aut.</sZ></fA14><fA20><s2>245313-245313-4</s2></fA20><fA21><s1>2003-06-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0317453</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We show experimentally and theoretically that the characteristic line at 3 eV in the reflectance anisotropy (RA) spectra of As-rich (001) GaAs has a mixed bulk and surface origin. The experimental observations rely on the analysis of the position of this line as a function of indium concentration in Ga<sub>1-x</sub>In<sub>x</sub>As. Up to x≃0.5, the peak energy dependence follows that of the nearby E<sub>1</sub> bulk optical transition, which shows that the line is not of pure surface character. The same conclusion is drawn from the mere fact that the line position depends on x since, because of indium surface segregation and bond length conservation, the energy of a purely surface-related transition should weakly depend on bulk composition. 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